2SC4793AF
2SC4793AF is High Frequency NPN Power Transistor manufactured by NELL SEMICONDUCTOR.
FEATURES
High transition frequency: f T = 100MHz (typ.) plementary to 2SA1837AF TO-220F package which can be installed to the heat sink with one screw BC E TO-220F (2SC4793AF)
APPLICATIONS
Power amplifier Driver stage amplifier
C (2) B (1)
E (3)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL VCBO V CEO V EBO IC I CM (I cp ) IB PC TJ T STG PARAMETER Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current-continuous Peak collector current Base Current Collector power dissipation Junction temperature Storage temperature T C =25°C T a =25°C t p <5 ms I B =0 I C =0 TEST CONDITIONS VALUE 230 230 5 1 2 0.1 20 2.0 150 °C -55 to 150 W A V UNIT
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL ICBO l EBO V (BR)CEO V CE(sat)
- V BE h FE
- FT C ob PARAMETER Collector cutoff current Emitter cutoff current TEST CONDITIONS T C =25°C V CBO =230V, l E =0 V EBO =5V, l C =0 230 1.5 1.0 100 100 20 320 MHz p F V T C =125°C Min. Typ. Max. 1.0 100 1.0 μA UNIT
Collector to emitter breakdown voltage I B =0, I c =100m A Collector to emitter saturation voltage Base to emitter voltage Forward current transfer ratio (DC current gain) Transition frequeucy Collector output capacitance I C =0.5A, I B =50m A I C =0.5A, V CE =5V I C =0.1A, V CE =5V V CE =10V, I C =100m A V CB =10V, I E =0, f=1MHz
- Pulsed: Pulse duration= 300 μ s, duty cycle= 1.5%. http://..
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SEMICONDUCTOR
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Nell High Power Products
Fig.1 I C -V CE Characteristics
20 m A 10 m A
Fig.2 I C -V BE Temperature characteristics
Collector current, I C (A)
Collector current, I C (A)
8 m A 6 m A
4 m A
T C = 100°C 25°C
-25°C
0.4 I B = 2m A 0.2 mon emitter T C = 25 ° C 0 0 2 4 6 8 10
0.2 mon emitter V CE = 5V 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Collector-emitter voltage, V CE (V)
Base-emitter voltage, V BE...
